US 12,394,720 B2
Semiconductor package including reinforcement structure and methods of forming the same
Wei-Hung Lin, Xinfeng Township (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Aug. 16, 2022, as Appl. No. 17/888,529.
Prior Publication US 2024/0063128 A1, Feb. 22, 2024
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01)
CPC H01L 23/5383 (2013.01) [H01L 21/4857 (2013.01); H01L 23/49894 (2013.01); H01L 23/5385 (2013.01); H01L 23/562 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32221 (2013.01); H01L 2224/73204 (2013.01); H01L 2924/0665 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package comprising:
a package substrate comprising:
a substrate core;
an upper redistribution layer disposed on a first side of the substrate core and comprising a dielectric structure and metal features that extend through the dielectric structure; and
a lower redistribution layer disposed on an opposing second side of the substrate core;
an interposer vertically stacked on the upper redistribution layer and connected to the metal features;
a semiconductor device vertically stacked on and connected to the interposer; and
an upper reinforcement layer embedded in the upper redistribution layer between the semiconductor device and the substrate core, the upper reinforcement layer having a Young's modulus that is higher than a Young's modulus of the upper redistribution layer, wherein the metal features extend through the upper reinforcement layer.