US 12,394,689 B2
Thermal thick film integrated circuit
Sidney Tang, Hong Kong (CN)
Assigned to Sidney Tang, Wanchai (HK)
Appl. No. 17/615,936
Filed by Sidney Tang, Hong Kong (CN)
PCT Filed Jan. 27, 2021, PCT No. PCT/CN2021/073906
§ 371(c)(1), (2) Date Dec. 2, 2021,
PCT Pub. No. WO2021/179823, PCT Pub. Date Sep. 16, 2021.
Claims priority of application No. 202020303368.6 (CN), filed on Mar. 12, 2020.
Prior Publication US 2022/0319955 A1, Oct. 6, 2022
Int. Cl. H01L 23/38 (2006.01)
CPC H01L 23/38 (2013.01) 14 Claims
OG exemplary drawing
 
1. A thermal thick film integrated circuit comprising: a metal substrate and a vapor chamber which are arranged in layers, and one or more thermoelectric element sandwiched between the metal substrate and the vapor chamber, wherein a first surface of the one or more thermoelectric elements is in contact with the metal substrate and wherein a second surface of the one or more thermoelectric elements is in contact with the vapor chamber, wherein an integrated circuit is arranged on a surface of the metal substrate proximal to the vapor chamber, such that the integrated circuit is in between the metal substrate and the vapor chamber, and the one or more thermoelectric element being connected to a power supply.