	US 12,394,684 B2
	Die stacking structure, semiconductor package and formation method of the die stacking structure
Su-Chun Yang, Hsinchu County (TW); Jih-Churng Twu, Hsinchu County (TW); Jiung Wu, Taoyuan (TW); Chih-Hang Tung, Hsinchu (TW); and Chen-Hua Yu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 16, 2022, as Appl. No. 17/744,737.
Prior Publication US 2023/0369156 A1, Nov. 16, 2023
Int. Cl. H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/498 (2006.01); H01L 25/10 (2006.01)

CPC H01L 23/3192 (2013.01) [H01L 21/561 (2013.01); H01L 23/291 (2013.01); H01L 23/293 (2013.01); H01L 23/3185 (2013.01); H01L 23/49816 (2013.01); H01L 23/49833 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/105 (2013.01); H01L 23/3142 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2224/08148 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48228 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1058 (2013.01)]

20 Claims

1. A die stacking structure, comprising:

a first device die;

second device dies, bonded onto the first device die, and arranged side-by-side; and

a stack of dielectric layers, extending in between the second device dies, and laterally enclosing each of the second device dies, wherein the dielectric layers are respectively formed of a spin-on-glass (SOG) or a polymer, and a lower one of the dielectric layers has a thickness greater than a thickness of another one of the dielectric layers at a higher level,

wherein a topmost one of the dielectric layers has a substantially flat top surface, and others of the dielectric layers each have a top surface concave toward the first device die.