US 12,394,677 B2
Semiconductor structure with overlay mark and system for manufacturing the same
Tsai-Wei Lin, New Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Jul. 10, 2023, as Appl. No. 18/219,846.
Application 18/219,846 is a division of application No. 17/898,116, filed on Aug. 29, 2022.
Prior Publication US 2024/0071843 A1, Feb. 29, 2024
Int. Cl. H01L 21/66 (2006.01); G03F 7/00 (2006.01); G03F 9/00 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/544 (2006.01)
CPC H01L 22/30 (2013.01) [G03F 7/70 (2013.01); G03F 9/7046 (2013.01); H01L 21/76885 (2013.01); H01L 22/12 (2013.01); H01L 23/544 (2013.01); H01L 21/32139 (2013.01); H01L 2223/54426 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A system for manufacturing a semiconductor structure, comprising:
a fabrication equipment, configured to perform operations to form a layer on a wafer;
an exposure equipment, configured to perform patterning operations to form a pattern of the layer; and
an alignment equipment, configured to detect an alignment of two overlay marks at different elevations, the alignment equipment comprising:
a stage, configured to support a semiconductor structure;
an optical device, configured to emit a radiation to excite a photoluminescent material of an overlay mark in a scribe line region of the semiconductor structure;
an optical filter, configured to receive and filter a radiation emitted from the photoluminescent material; and
an optical detector, configured to convert an optical signal filtered by the optical filter to an electrical signal;
wherein a filtration range of wavelengths of the optical filter is different from a range of wavelengths of radiations emitted from the optical device.