US 12,394,668 B2
Semiconductor device having edge seal and method of making thereof without metal hard mask arcing
Michiaki Sano, Yokkaichi (JP); and Tatsuya Hinoue, Yokkaichi (JP)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Sep. 16, 2022, as Appl. No. 17/932,907.
Prior Publication US 2024/0096695 A1, Mar. 21, 2024
Int. Cl. H01L 29/788 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/76831 (2013.01) [H01L 21/31144 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of making a semiconductor structure, comprising:
forming a semiconductor die including semiconductor devices and a dielectric material portion over a semiconductor substrate, wherein the dielectric material portion laterally surrounds the semiconductor devices;
forming a contact-level dielectric layer over the semiconductor devices and the dielectric material portion;
forming a conductive bridge structure through or underneath the contact-level dielectric layer in a peripheral region of the semiconductor die;
forming a conductive hard mask layer over the contact-level dielectric layer and the conductive bridge structure;
forming an edge seal opening through the conductive hard mask layer along a periphery of the dielectric material portion, wherein an inner portion of the conductive hard mask layer located within an area enclosed by an inner periphery of the edge seal opening is electrically connected to the semiconductor substrate through the conductive bridge structure and through a vertically-extending portion of the conductive hard mask layer;
forming a continuous moat trench by anisotropically etching regions of the dielectric material portion that underlie the edge seal opening; and
forming a conductive edge seal structure by filling the continuous moat trench with at least one conductive material.