US 12,394,632 B2
Plasma processing method and plasma processing system
Atsuki Hashimoto, Miyagi (JP); Sho Saitoh, Miyagi (JP); and Yoshimitsu Kon, Miyagi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Feb. 21, 2023, as Appl. No. 18/112,302.
Claims priority of application No. 2022-025104 (JP), filed on Feb. 21, 2022.
Prior Publication US 2023/0268190 A1, Aug. 24, 2023
Int. Cl. H01L 21/311 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/31116 (2013.01) [H01J 37/32174 (2013.01); H01J 37/32449 (2013.01); H01L 21/31144 (2013.01); H01J 2237/3346 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A plasma processing method executed by a plasma processing apparatus with a chamber, the plasma processing method comprising:
(a) providing in the chamber a substrate that includes an etching film and a mask film, the substrate including a first region where the etching film is exposed and a second region where the mask film is exposed;
(b) supplying into the chamber a processing gas including a carbon-containing gas to generate plasma from the processing gas to etch the etching film and to form a protective film on the mask film; and
(c) supplying the processing gas into the chamber to generate plasma from the processing gas to further etch the etching film and to remove at least part of the protective film,
wherein (b) includes a first period and a second period, and a flow rate of the carbon-containing gas in the first period is greater than a flow rate of the carbon-containing gas in the second period, and
(c) includes a third period and a fourth period, and a flow rate of the carbon-containing gas in the third period is less than the flow rate of the carbon-containing gas in the second period and a flow rate of the carbon-containing gas in the fourth period.