US 12,394,630 B2
In situ generation process and system
Varun Sharma, Helsinki (FI); and Michael Givens, Oud-Heverlee (BE)
Assigned to ASM IP HOLDING B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jul. 25, 2022, as Appl. No. 17/872,054.
Claims priority of provisional application 63/226,196, filed on Jul. 28, 2021.
Prior Publication US 2023/0032495 A1, Feb. 2, 2023
Int. Cl. H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/3065 (2013.01) [H01L 21/02049 (2013.01); H01L 21/02178 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/31122 (2013.01); H01L 21/67017 (2013.01); H01L 21/67063 (2013.01); H01L 21/67069 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for the in situ generation of an etchant in a semiconductor processing apparatus, the method comprising:
generating in situ the etchant in the semiconductor processing apparatus in the form of a hydrogen halide generated from a precursor halide compound in the presence of a reactant comprising hydrogen or hydrogen and oxygen,
wherein the precursor halide compound comprises a member selected from the group consisting of a metal halide, a non-metal halide, a metalloid halide, and combinations thereof; and
wherein the precursor halide compound comprises a mixed halide compound or an oxyhalide compound.