US 12,394,621 B2
Method and apparatus for manufacturing a semiconductor layer and substrate provided therewith
Stefano Leone, Freiburg (DE); Christian Manz, Freiburg (DE); Hanspeter Menner, Freiburg (DE); Joachim Wiegert, Freiburg (DE); and Jana Ligl, Freiburg (DE)
Assigned to Albert-Ludwigs-Universität Freiburg, Freiburg (DE); and Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., Munich (DE)
Filed by Albert-Ludwigs-Universität Freiburg, Freiburg (DE); and Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., Munich (DE)
Filed on Apr. 4, 2024, as Appl. No. 18/626,472.
Application 18/626,472 is a division of application No. 17/004,302, filed on Aug. 27, 2020, granted, now 11,996,287.
Claims priority of application No. 10 2019 212 821.1 (DE), filed on Aug. 27, 2019; and application No. 10 2020 204 294.2 (DE), filed on Apr. 2, 2020.
Prior Publication US 2024/0274435 A1, Aug. 15, 2024
Int. Cl. H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/448 (2006.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01)
CPC H01L 21/0254 (2013.01) [C23C 16/303 (2013.01); C23C 16/4482 (2013.01); H01L 21/0262 (2013.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01)] 21 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor layer on a substrate by metal-organic vapor phase epitaxy, wherein:
the semiconductor layer comprises at least one compound of the formula M1aM21-aN, wherein:
M1 is selected from group 13 of the periodic table and
M2 is selected from the group consisting of scandium, yttrium, erbium, and europium and wherein:
the parameter a is selected from a range of between 0.01 and 0.99; and
said method comprising supplying a first precursor into a reaction chamber, said first precursor comprising at least M2 and being supplied to the reaction chamber at a molar flow rate of at least 1·10−6 mol/min, wherein:
said first precursor is provided by a first bubbler and supplied to the reaction chamber, a temperature of said first bubbler is more than about 90° C.; and
said molar flow rate is determined by the following formula:

OG Complex Work Unit Math
where:
V—denotes the flow of the carrier gas
pSC—denotes a partial pressure of the first precursor within the first bubbler
ptotal—denotes the total partial pressure within the first bubbler resulting from the first precursor mixed with the first carrier gas
T—denotes the temperature of the first bubbler
R—denotes the universal gas constant
wherein the method comprises further supplying a second precursor into said reaction chamber, said second precursor comprising at least M1, wherein said second precursor is provided by a second bubbler and supplied to the reaction chamber; and
wherein the method comprises further supplying a source of nitrogen into said reaction chamber.