US 12,394,611 B2
Semiconductor tool for copper deposition
Chia-Hung Tsai, Hsinchu County (TW); Chin-Szu Lee, Taoyuan (TW); Szu-Hua Wu, Zhubei (TW); Jui-Hung Ho, Hsinchu (TW); Chi-Hung Liao, Hsinchu (TW); and Yu-Jen Chien, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 10, 2023, as Appl. No. 18/447,557.
Application 18/447,557 is a division of application No. 17/651,272, filed on Feb. 16, 2022.
Prior Publication US 2023/0386809 A1, Nov. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/34 (2006.01); C23C 14/35 (2006.01); C23C 14/54 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H05K 9/00 (2006.01); H01L 23/532 (2006.01)
CPC H01J 37/3488 (2013.01) [C23C 14/35 (2013.01); C23C 14/54 (2013.01); H01J 37/3447 (2013.01); H01J 37/3452 (2013.01); H01J 37/3476 (2013.01); H01L 21/2855 (2013.01); H01L 21/76879 (2013.01); H05K 9/0088 (2013.01); H01L 23/53238 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
at least one processor configured to cause the apparatus to:
transmit a command, to a transport mechanism, to move a magnetic shield from a first position, adjacent to a chamber, to a second position adjacent to the chamber,
wherein the second position is based on a thickness of a deposition of a first layer of copper associated with a first portion of the chamber and a thickness of a deposition of a second layer of copper, thicker than the first layer of copper, associated with a second portion of the chamber, and
wherein an electromagnet and a flow optimizer, associated with the chamber, are configured to direct copper ions from a copper target onto a wafer associated with the chamber.