| CPC H01J 37/32715 (2013.01) [C23C 16/4586 (2013.01); C23C 16/505 (2013.01); C23C 16/52 (2013.01); H01J 37/321 (2013.01); H01J 37/32183 (2013.01); H01J 2237/0262 (2013.01); H01J 2237/20235 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3323 (2013.01)] | 20 Claims |

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1. A plasma processing system, comprising:
a substrate support disposed within a processing volume of the plasma processing system, the substrate support comprising a body having a plurality of openings formed between a substrate support surface and backside opposite the substrate support surface;
a plurality of substrate support pins deposed in the plurality of openings of the substrate support, wherein when the substrate support is in a raised position, top portions of the plurality of substrate support pins are planar with or recessed below the substrate support surface, and when in a lowered position the substrate support pins extend above the substrate support surface;
a plurality of adjustable impedance circuits in electrical communications with associated ones of the plurality of substrate support pins; and
radio frequency (RF) voltage and RF current detectors electrically coupled to each of the plurality of adjustable impedance circuits.
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