US 12,394,602 B2
Wafer processing method
Chien Kuo Huang, Hsinchu (TW); Shih-Wen Huang, Tainan (TW); Joung-Wei Liou, Zhudong Town (TW); Chia-I Shen, Hsinchu (TW); and Fei-Fan Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 24, 2020, as Appl. No. 16/938,432.
Application 16/938,432 is a division of application No. 16/017,814, filed on Jun. 25, 2018, granted, now 10,741,366.
Application 16/017,814 is a continuation of application No. 13/927,631, filed on Jun. 26, 2013, granted, now 10,008,367, issued on Jun. 26, 2018.
Prior Publication US 2020/0357612 A1, Nov. 12, 2020
Int. Cl. H01J 37/32 (2006.01); C23C 16/452 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/67 (2006.01)
CPC H01J 37/32449 (2013.01) [C23C 16/452 (2013.01); C23C 16/45565 (2013.01); C23C 16/52 (2013.01); H01J 37/3244 (2013.01); H01L 21/67051 (2013.01); H01L 21/6708 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of wafer processing, the method comprising:
supporting a wafer in a process chamber;
introducing a flow of a gaseous material through an inlet of the process chamber to process the wafer; and
generating, between the inlet and the wafer, controllable forces using a plurality of controllable diffusers acting in various directions on the gaseous material to spread the gaseous material inside the process chamber; and
conducting a signal from a first controllable diffuser of the plurality of controllable diffusers to a second controllable diffuser of the plurality of controllable diffusers.