US 12,394,593 B2
Power control method and device of lower radio frequency power supply and semiconductor processing equipment
Jing Wei, Beijing (CN); Yu Zhang, Beijing (CN); Gang Wei, Beijing (CN); Guodao Shan, Beijing (CN); Chenyu Zhong, Beijing (CN); Yanyan You, Beijing (CN); and Jing Yang, Beijing (CN)
Assigned to BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
Filed by BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing (CN)
Filed on Mar. 26, 2024, as Appl. No. 18/616,998.
Application 18/616,998 is a continuation of application No. PCT/CN2022/120101, filed on Sep. 21, 2022.
Claims priority of application No. 202111126996.7 (CN), filed on Sep. 26, 2021.
Prior Publication US 2024/0234088 A1, Jul. 11, 2024
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/321 (2013.01) [H01J 37/32183 (2013.01); H01J 37/32577 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A power control method of a lower RF power supply of semiconductor processing equipment comprising:
when a processing chamber starts semiconductor processing, with a predetermined power compensation equation and according to a pre-obtained first RF circuit parameter set of a reference chamber and a second RF circuit parameter set of a present processing chamber performing the semiconductor processing, obtaining a power compensation coefficient of the present processing chamber relative to the reference chamber;
according to the power compensation coefficient and a power setting value of the lower RF power supply of the present processing chamber, calculating a power compensation value of the present processing chamber relative to the reference chamber; and
controlling the lower RF power supply to output the power compensation value;
wherein:
the first RF circuit parameter set includes a current at an output end of a lower matcher in a main path of a lower electrode RF circuit of the reference chamber, a current in a plasma sheath branch of the lower electrode RF circuit of the reference chamber, a loss equivalent resistance and a ground equivalent resistance of the lower electrode RF circuit of the reference chamber, and a lower electrode-to-ground capacitance of the reference chamber; and
the second RF circuit parameter set includes a loss equivalent resistance and aa grounded equivalent resistance of the lower RF circuit of the present processing chamber and a lower electrode-to-ground capacitance of the present processing chamber.
 
6. A power control device of a lower RF power supply in semiconductor process equipment comprising a calculation unit and a control unit, wherein:
the calculation unit is configured to, when a processing chamber starts semiconductor processing, adopt a predetermined power compensation equation, a pre-obtained first RF circuit parameter set of a reference chamber, and a second RF circuit parameter set of a present processing chamber performing the semiconductor processing, obtain a power compensation coefficient of the present processing chamber relative to the reference chamber, and according to the power compensation coefficient and a power setting value of the lower RF power supply of the present processing chamber, and calculate a power compensation value of the present processing chamber relative to the reference chamber; and
the control unit is configured to control the lower RF power supply to output the power compensation value;
wherein:
the first RF circuit parameter set includes a current at an output end of a lower matcher in a main path of a lower electrode RF circuit of the reference chamber, a current in a plasma sheath branch of the lower electrode RF circuit of the reference chamber, a loss equivalent resistance and a ground equivalent resistance of the lower electrode RF circuit of the reference chamber, and a lower electrode-to-ground capacitance of the reference chamber; and
the second RF circuit parameter set includes a loss equivalent resistance and aa grounded equivalent resistance of the lower RF circuit of the present processing chamber and a lower electrode-to-ground capacitance of the present processing chamber.