US 12,394,483 B2
Memory die management
Abhijith Prakash, Milpitas, CA (US); and Xiang Yang, Santa Clara, CA (US)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by Sandisk Technologies, Inc., Milpitas, CA (US)
Filed on May 17, 2022, as Appl. No. 17/746,068.
Prior Publication US 2023/0409230 A1, Dec. 21, 2023
Int. Cl. G11C 16/04 (2006.01); G06F 3/06 (2006.01)
CPC G11C 16/0483 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A data storage device, comprising:
a memory interface configured to interface with a non-volatile memory, the non-volatile memory including a plurality of memory dies, each of the memory dies including a bias voltage value; and
an electronic processor configured to:
compare the bias voltage value of each of the memory dies to a voltage threshold,
assign memory dies having a bias voltage value greater than the voltage threshold to a first group of memory dies,
assign memory dies having a bias voltage value less than or equal to the voltage threshold to a second group of memory dies,
store data within a memory die of the plurality of memory dies,
determine a cumulative read occurrence of the data,
compare the cumulative read occurrence of the data to a read threshold,
classify, when the cumulative read occurrence is greater than or equal to the read threshold, the data as hot data, and
classify, when the cumulative read occurrence is less than the read threshold, the data as cold data.