US 12,394,477 B2
Page write requirements for a distributed storage system
Hari Kannan, Sunnyvale, CA (US); and Peter E. Kirkpatrick, Los Altos, CA (US)
Assigned to PURE STORAGE, INC., Santa Clara, CA (US)
Filed by PURE STORAGE, INC., Santa Clara, CA (US)
Filed on Nov. 28, 2023, as Appl. No. 18/522,111.
Application 18/522,111 is a continuation of application No. 17/704,747, filed on Mar. 25, 2022, granted, now 11,869,583.
Application 17/704,747 is a continuation of application No. 17/085,362, filed on Oct. 30, 2020, granted, now 11,328,767, issued on May 10, 2022.
Application 17/085,362 is a continuation of application No. 16/200,301, filed on Nov. 26, 2018, granted, now 10,832,767, issued on Nov. 10, 2020.
Application 16/200,301 is a continuation of application No. 15/498,979, filed on Apr. 27, 2017, granted, now 10,141,050, issued on Nov. 27, 2018.
Prior Publication US 2024/0170058 A1, May 23, 2024
Int. Cl. G11C 11/50 (2006.01); G06F 3/06 (2006.01); G06F 12/02 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01)
CPC G11C 11/5628 (2013.01) [G06F 3/061 (2013.01); G06F 3/0614 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01); G06F 12/0246 (2013.01); G11C 16/10 (2013.01); G11C 16/102 (2013.01); G06F 2212/7203 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
determining page write requirements for differing types of multi-level cell flash memory utilized by a distributed storage system, the page write requirements providing an order for writing to pages of the differing types of the multi-level cell flash memory wherein a source of data received by the storage system is external to the storage system and unaware of the page write requirements for the differing types of the multi-level cell flash memory, wherein the differing types of flash memories comprise one or more types of managed flash storage devices that offload management responsibilities to a controller of the storage system, wherein at least one of the management responsibilities comprises providing the order for writing to the pages of the differing types of the multi-level cell flash memory to assure read coherency.