US 12,394,470 B2
Semiconductor chip capable of calibrating bias voltage supplied to write clock buffer regardless of process variation and temperature variation, and devices including the same
Garam Choi, Suwon-si (KR); Yonghun Kim, Suwon-si (KR); Jaewoo Lee, Suwon-si (KR); Kihan Kim, Suwon-si (KR); and Hojun Chang, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 13, 2023, as Appl. No. 18/221,598.
Claims priority of application No. 10-2022-01279874 (KR), filed on Oct. 6, 2022.
Prior Publication US 2024/0119997 A1, Apr. 11, 2024
Int. Cl. G11C 11/00 (2006.01); G11C 11/4074 (2006.01); G11C 11/4076 (2006.01); G11C 11/4093 (2006.01)
CPC G11C 11/4093 (2013.01) [G11C 11/4074 (2013.01); G11C 11/4076 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor chip comprising:
a write clock buffer;
a voltage regulator configured to generate a plurality of regulated voltages;
a process calibration circuit configured to output one of the plurality of regulated voltages as a bias voltage of the write clock buffer, depending on a process variation of the semiconductor chip; and
a temperature calibration circuit configured to track a temperature variation of the semiconductor chip in real time, perform analog calibration on the bias voltage from the process calibration circuit in real time depending on a result of the tracking, and output the analog-calibrated bias voltage to the write clock buffer.