US 12,394,466 B2
Memory device, memory system including the same and method of operating the same
Hijung Kim, Suwon-si (KR); and Seongjin Cho, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 18, 2023, as Appl. No. 18/319,655.
Claims priority of application No. 10-2022-0144310 (KR), filed on Nov. 2, 2022.
Prior Publication US 2024/0144990 A1, May 2, 2024
Int. Cl. G11C 11/406 (2006.01); G11C 11/4078 (2006.01)
CPC G11C 11/40622 (2013.01) [G11C 11/40611 (2013.01); G11C 11/4078 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a memory cell array including a plurality of memory cells coupled to wordlines and bitlines;
a target row refresh logic configured to perform a refresh operation based on a weighted access count on the memory cell array;
a register configured to store the weighted access count for each of a plurality of row addresses;
an accumulator configured to accumulate a current weighted access count corresponding to an access spacing to the weighted access count stored in the register, the access spacing being based on a first access and a subsequent access of a target row of the memory device; and
a calculator configured to calculate the access spacing.