US 12,394,463 B2
Stochastic memristive devices based on arrays of magnetic tunnel junctions
Pedram Khalili Amiri, Wilmette, IL (US); and Giovanni Finocchio, Messina (IT)
Assigned to NORTHWESTERN UNIVERSITY, Evanston, IL (US)
Filed by NORTHWESTERN UNIVERSITY, Evanston, IL (US)
Filed on Dec. 6, 2023, as Appl. No. 18/531,588.
Application 18/531,588 is a division of application No. 17/406,491, filed on Aug. 19, 2021, granted, now 11,875,833.
Application 17/406,491 is a continuation in part of application No. 16/919,997, filed on Jul. 2, 2020, granted, now 11,127,446, issued on Sep. 21, 2021.
Claims priority of provisional application 62/870,277, filed on Jul. 3, 2019.
Prior Publication US 2024/0105245 A1, Mar. 28, 2024
Int. Cl. G11C 11/16 (2006.01); G06N 3/04 (2023.01); G11C 11/54 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01)
CPC G11C 11/161 (2013.01) [G06N 3/04 (2013.01); G11C 11/1653 (2013.01); G11C 11/1673 (2013.01); G11C 11/54 (2013.01); H10B 61/22 (2023.02); H10N 50/80 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A device comprising:
an array of magnetic tunnel junctions (MTJs) electrically connected in series configuration,
wherein each MTJ of the array of MTJs has a voltage-tunable thermal stability,
wherein each MTJ of the array of MTJs exhibits a stochastic switching of a resistance between two states of values R1 and R0, and
wherein an overall resistance of the array of MTJs having a value between R1*n and R0*n, where n is a number of active MTJs in the array of MTJs.