US 12,393,762 B2
Method for generating a layout diagram of a semiconductor device including power-grid- adapted route-spacing
Li-Chun Tien, Hsinchu (TW); Shun Li Chen, Hsinchu (TW); Ting-Wei Chiang, Hsinchu (TW); Ting Yu Chen, Hsinchu (TW); and XinYong Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Nov. 12, 2021, as Appl. No. 17/525,375.
Application 17/525,375 is a division of application No. 16/373,356, filed on Apr. 2, 2019, granted, now 11,182,529.
Prior Publication US 2022/0075923 A1, Mar. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/52 (2006.01); G06F 30/30 (2020.01); G06F 30/392 (2020.01); G06F 30/394 (2020.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC G06F 30/394 (2020.01) [G06F 30/30 (2020.01); G06F 30/392 (2020.01); H01L 23/5226 (2013.01); H01L 23/5286 (2013.01)] 20 Claims
OG exemplary drawing
 
10. A method of forming a semiconductor device, the method comprising:
forming conductive segments in a conductive layer M(h) where h is an integer and h≥1, the forming conductive segments in the conductive layer M(h) including:
forming first and second power grid (PG) segments that extend in a first direction and are separated in a second direction by a PG gap having a midpoint, the second direction being substantially perpendicular to the first direction; and
forming at least two first routing segments that extend in the first direction and overlap each other with respect to the second direction; and
wherein one of a first circumstance or a second circumstance is true:
the first circumstance being that:
the forming at least two first routing segments results in a total of the at least two first routing segments in the PG gap being an odd number, and the midpoint of the PG gap being located on a long axis of one of the at least two first routing segments; or
the second circumstance being that:
the forming at least two first routing segments results in the total of the at least two first routing segments in the PG gap being an even number, and the midpoint of the PG gap being located, relative to the second direction, in a gap between corresponding neighboring ones of the at least two first routing segments.