US 12,393,761 B2
Integrated circuit and method of forming the same
Pochun Wang, Hsinchu (TW); Yu-Jung Chang, Hsinchu (TW); Hui-Zhong Zhuang, Hsinchu (TW); and Ting-Wei Chiang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 9, 2024, as Appl. No. 18/407,727.
Application 18/407,727 is a continuation of application No. 18/065,299, filed on Dec. 13, 2022, granted, now 11,868,699.
Application 18/065,299 is a continuation of application No. 17/326,811, filed on May 21, 2021, granted, now 11,550,986, issued on Jan. 10, 2023.
Application 17/326,811 is a continuation of application No. 16/659,270, filed on Oct. 21, 2019, granted, now 11,048,849, issued on Jun. 29, 2021.
Claims priority of provisional application 62/753,279, filed on Oct. 31, 2018.
Prior Publication US 2024/0143888 A1, May 2, 2024
Int. Cl. G06F 30/392 (2020.01); G06F 30/39 (2020.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H03K 19/0948 (2006.01); H03K 19/20 (2006.01); H10D 84/85 (2025.01)
CPC G06F 30/392 (2020.01) [G06F 30/39 (2020.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/5286 (2013.01); H03K 19/0948 (2013.01); H03K 19/20 (2013.01); H10D 84/85 (2025.01)] 20 Claims
OG exemplary drawing
 
18. An integrated circuit, comprising:
a first active region extending in a first direction, being in a substrate, and being located on a first level, the first active region including a first drain/source region, and a second drain/source region;
a second active region in the substrate, being located on the first level, and being separated from the first active region in a second direction different from the first direction, the second active region including a third drain/source region and a fourth drain/source region;
a first insulating region over the first drain/source region;
a second insulating region over the second drain/source region, and being separated from the first insulating region in the first direction;
a first contact extending in the second direction, overlapping the third drain/source region, and being located on a second level different from the first level; and
a second contact being located on a third level different from the first level and the second level, and the second contact comprising:
a first portion extending in the first direction, overlapping the first drain/source region and the second drain/source region;
a second portion extending in the second direction, overlapping the first contact, the second drain/source region, the third drain/source region and the second insulating region, being electrically coupled to the first portion, and being electrically insulated from the second drain/source region;
a third portion extending in the second direction, overlapping the first drain/source region, the fourth drain/source region and the first insulating region, and being electrically insulated from the first drain/source region; and
a power rail extending in the first direction, being located on a fourth level different from the first level, the second level and the third level, and being configured to supply a supply voltage or a reference supply voltage to the first active region or the second active region.