US 12,393,365 B2
Method of controlling memory, memory and memory system
Jianjie Li, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Aug. 25, 2023, as Appl. No. 18/238,181.
Prior Publication US 2024/0078038 A1, Mar. 7, 2024
Int. Cl. G11C 7/00 (2006.01); G06F 3/06 (2006.01); G11C 16/26 (2006.01)
CPC G06F 3/0656 (2013.01) [G06F 3/0608 (2013.01); G06F 3/0679 (2013.01); G11C 16/26 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of controlling a memory, comprising:
performing a read operation based on a read voltage corresponding to a target logical page to obtain a hard read value and a soft read value of the target logical page;
storing the hard read value, the soft read value, and inhibition information into three latches in a page buffer respectively;
obtaining hard data of the target logical page based on the hard read value of the target logical page; and
obtaining soft data of the target logical page based on the hard data and the soft read value of the target logical page,
wherein the memory comprises a plurality of memory cells,
wherein each of the memory cells is configured to store N-bit data, and
wherein N is an integer greater than 1.