US 12,393,129 B2
Method and device for cleaning substrates
Chung-Hsuan Liu, Taichung (TW); Chen-Yang Lin, Zhudong Township (TW); Ku-Hsiang Sung, Taoyuan (TW); Da-Wei Yu, Hsinchu (TW); Kuan-Wen Lin, Taichung (TW); Chia-Jen Chen, Jhudong Township (TW); and Hsin-Chang Lee, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 22, 2024, as Appl. No. 18/671,174.
Application 18/671,174 is a continuation of application No. 17/367,835, filed on Jul. 6, 2021, granted, now 12,032,302.
Claims priority of provisional application 63/166,893, filed on Mar. 26, 2021.
Prior Publication US 2024/0310744 A1, Sep. 19, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/00 (2006.01); B08B 7/00 (2006.01); B08B 13/00 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); H05H 1/00 (2006.01)
CPC G03F 7/70925 (2013.01) [B08B 7/0035 (2013.01); B08B 13/00 (2013.01); H01L 21/02057 (2013.01); H01L 22/12 (2013.01); H05H 1/01 (2021.05)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device comprising:
retrieving a substrate from a substrate storage;
transferring the substrate to a cleaning device;
inspecting a surface of the substrate;
generating a map of one or more particles on the surface of the substrate, wherein the map includes particle locations and the map includes particle sizes;
consecutively cleaning the one or more particles from the surface of the substrate in the cleaning device, by moving the substrate according to the map and by exposing the surface of the substrate to a plasma wind stream at an oblique angle with respect to a perpendicular plane to the surface of the substrate for a predetermined exposure time to remove the one or more particles from the surface of the substrate;
adjusting a speed of the plasma wind stream based on the particle sizes;
adjusting a width of an output opening of an output port of an ambient plasma generator to adjust the speed of the plasma wind stream; and
transferring the substrate to a semiconductor manufacturing apparatus.