US 12,393,123 B2
Optical proximity correction method, mask manufacturing method and semiconductor chip manufacturing method using the same
Wonjoo Im, Yongin-si (KR); Noyoung Chung, Hwaseong-si (KR); and Sanghwa Lee, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 9, 2022, as Appl. No. 17/739,752.
Claims priority of application No. 10-2021-0118357 (KR), filed on Sep. 6, 2021.
Prior Publication US 2023/0071777 A1, Mar. 9, 2023
Int. Cl. G03F 7/00 (2006.01); G03F 1/36 (2012.01); G06F 30/398 (2020.01); G06F 119/18 (2020.01)
CPC G03F 7/70441 (2013.01) [G03F 1/36 (2013.01); G06F 30/398 (2020.01); G06F 2119/18 (2020.01)] 17 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor chip, the method comprising:
designing a layout for a semiconductor chip;
performing a multi-edge optical proximity correction (OPC) on the layout;
selecting a multi-edge corner rounding OPC shape target from the layout;
performing a multi-edge corner rounding OPC on the selected multi-edge corner rounding OPC shape target;
manufacturing a mask corresponding to the layout after performing the multi-edge OPC and the multi-edge corner rounding OPC; and
manufacturing the semiconductor chip using the mask,
wherein a plurality of OPC shapes corresponding to a rectangular pattern of the mask are included in an OPC model,
wherein at least one of the plurality of OPC shapes includes a multi-edge OPC shape, and
wherein at least one of the plurality of OPC shapes includes a multi-edge corner rounding OPC shape.