	US 12,393,122 B2
	Thinner composition and method of processing surfaces of semiconductor substrates
Kyung Hee Oh, Icheon-si (KR); Jun Kyoung Lee, Icheon-si (KR); Tomoya Kumagai, Kanagawa (JP); and Motoki Takahashi, Kanagawa (JP)
Assigned to SK hynix Inc., Icheon-si (KR); and TOKYO OHKA KOGYO CO., LTD., Kanagawa (JP)
Filed by SK hynix Inc., Icheon-si (KR); and TOKYO OHKA KOGYO CO., LTD., Kanagawa (JP)
Filed on Dec. 14, 2021, as Appl. No. 17/549,939.
Claims priority of application No. 10-2021-0012724 (KR), filed on Jan. 29, 2021.
Prior Publication US 2022/0243149 A1, Aug. 4, 2022
Int. Cl. C11D 7/26 (2006.01); C11D 3/20 (2006.01); C11D 7/50 (2006.01); G03F 1/68 (2012.01); G03F 7/00 (2006.01); G03F 7/42 (2006.01)

CPC G03F 7/70033 (2013.01) [C11D 3/2068 (2013.01); C11D 3/2096 (2013.01); C11D 7/263 (2013.01); C11D 7/266 (2013.01); C11D 7/267 (2013.01); G03F 1/68 (2013.01); G03F 7/422 (2013.01); C11D 2111/22 (2024.01)]

10 Claims

1. A thinner composition for removing a resist comprising propylene glycol monoalkyl ether, propylene glycol monoalkyl ether acetate, cyclohexanone, and cyclopentanone,

wherein the propylene glycol monoalkyl ether comprises from 1 wt % to 35 wt %, based on a total weight, of the thinner composition;

wherein the propylene glycol monoalkyl ether acetate comprises from 45 wt % to 55 wt %, based on the total weight, of the thinner composition;

wherein a total amount of the combination of the cyclohexanone and the cyclopentanone comprises from 25 wt % to 45 wt %, based on the total weight, of the thinner composition; and

wherein the ratio by weight of the cyclohexanone to the cyclopentanone is between 1:0.1 and 1:10.