US 12,393,121 B2
Point-of-use blending of rinse solutions for EUV processing to mitigate pattern collapse
Lior Huli, Albany, NY (US); and Naoki Shibata, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jun. 16, 2023, as Appl. No. 18/336,508.
Application 18/336,508 is a division of application No. 16/674,124, filed on Nov. 5, 2019, granted, now 11,762,297.
Claims priority of provisional application 62/831,465, filed on Apr. 9, 2019.
Prior Publication US 2023/0324808 A1, Oct. 12, 2023
Int. Cl. G03F 7/40 (2006.01); B08B 3/08 (2006.01); G03F 7/20 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01)
CPC G03F 7/40 (2013.01) [B08B 3/08 (2013.01); G03F 7/2004 (2013.01); H01L 21/0206 (2013.01); H01L 21/0274 (2013.01)] 13 Claims
 
1. A method to dispense a rinse solution to mitigate pattern collapse for a patterned photoresist provided on a current workpiece which is being processed in a process chamber, comprising:
providing a mitigation solution with a first formulation in a reservoir associated with the process chamber;
providing one or more mitigation solution components in respective additional reservoirs associated with the process chamber;
determining a type of patterned photoresist that is provided on the current workpiece;
selecting a formulation which corresponds to the determined type of patterned photoresist provided on the current workpiece:
adjusting the mitigation solution by delivering, according to the selected formulation, an amount of the mitigation solution and the one or more mitigation solution components to a mixer to mix an adjusted mitigation solution having a second formulation; and
dispensing the adjusted mitigation solution having the second formulation onto the patterned photoresist provided on the current workpiece to rinse the patterned photoresist while mitigating pattern collapse.