US 12,393,118 B2
Composition for photoresist underlayer
Jung June Lee, Hwaseong-si (KR); Jae Hwan Sim, Hwaseong-si (KR); Suwoong Kim, Hwaseong-si (KR); Jin Hong Park, Hwaseong-si (KR); and Bhooshan Popere, Sturbridge, MA (US)
Assigned to DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC, Marlborough, MA (US); and DUPONT SPECIALTY MATERIALS KOREA LTD, Chungcheongnam-Do (KR)
Filed by ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD., Cheonan-si (KR); and ROHM AND HAAS ELECTRONIC MATERIALS LLC, Marlborough, MA (US)
Filed on May 28, 2021, as Appl. No. 17/333,622.
Prior Publication US 2022/0397827 A1, Dec. 15, 2022
Int. Cl. G03F 7/11 (2006.01); C08F 220/24 (2006.01); C08G 18/81 (2006.01); C09D 175/04 (2006.01)
CPC G03F 7/11 (2013.01) [C08F 220/24 (2013.01); C08G 18/8108 (2013.01); C09D 175/04 (2013.01)] 15 Claims
 
1. A coated substrate, comprising:
a cured layer of a photoresist underlayer composition disposed on a substrate; and
a photoresist layer disposed on the cured layer of the photoresist underlayer composition,
wherein the photoresist underlayer composition is different from the photoresist layer,
wherein the photoresist underlayer composition comprises:
a first polymer comprising an isocyanurate repeating unit and a crosslinkable group;
a second polymer comprising:
a first repeating unit comprising a repeating unit comprising a photoacid generator, and
a second repeating unit comprising a hydroxy-substituted C1-30 alkyl group, a hydroxy-substituted C3-30 cycloalkyl group, or a hydroxy-substituted C6-30 aryl group;
an acid catalyst, wherein the acid catalyst is different from the photoacid generator of the second polymer; and
a solvent.