US 12,393,114 B2
Semiconductor apparatus and method of operating the same
Wen Lo, Taipei (TW); Shih-Ming Chang, Hsinchu County (TW); and Chun-Hung Liu, Kaohsiung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Aug. 9, 2022, as Appl. No. 17/884,224.
Application 17/884,224 is a continuation of application No. 16/441,158, filed on Jun. 14, 2019, granted, now 11,467,488.
Prior Publication US 2022/0382145 A1, Dec. 1, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 1/78 (2012.01); H01J 37/09 (2006.01); H01J 37/317 (2006.01); H01J 37/10 (2006.01)
CPC G03F 1/78 (2013.01) [H01J 37/09 (2013.01); H01J 37/3174 (2013.01); H01J 37/10 (2013.01); H01J 2237/0451 (2013.01); H01J 2237/31776 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
generating an electron beam from a radiation source;
modifying an energy distribution of the electron beam through a first shaping aperture, wherein the first shaping aperture comprises:
blocking strips with a plurality of slots therebetween;
a frame surrounding the blocking strips; and
a diagonal support connected to the frame and one of the blocking strips, wherein the blocking strips, the frame, and the diagonal support collectively form an L-shape opening within the first shaping aperture; and
exposing a substrate to portions of the electron beam passing through the first shaping aperture.