| CPC G02B 6/136 (2013.01) [G01C 19/04 (2013.01); G02B 2006/12035 (2013.01); G02B 2006/12176 (2013.01); G02B 2006/12197 (2013.01)] | 16 Claims |

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1. A waveguide structure, comprising two fused silica wafers directly adjacent to a first core, the waveguide structure created by:
providing a first fused silica wafer acting as a first cladding;
forming a patterned silicon nitride (SiN) layer on top of the first fused silica wafer, wherein the patterned SiN layer acts as the first core;
forming an oxide layer coinciding with the patterned SiN layer, wherein the oxide layer surrounds the first core from sides; and
bonding a second fused silica wafer to the oxide layer and the patterned SiN layer, wherein the second fused silica wafer acts as a second cladding, and wherein the first core is surrounded by the first fused silica wafer underneath, and second fused silica wafer directly on top and the oxide layer on the sides.
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