US 12,392,961 B2
Structure and process for photonic packages
Chen-Hua Yu, Hsinchu (TW); Hsing-Kuo Hsia, Jhubei (TW); and Kuo-Chiang Ting, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 8, 2023, as Appl. No. 18/366,758.
Application 18/366,758 is a division of application No. 17/232,567, filed on Apr. 16, 2021, granted, now 12,135,454.
Prior Publication US 2023/0384517 A1, Nov. 30, 2023
Int. Cl. G02B 6/122 (2006.01); G02B 6/12 (2006.01)
CPC G02B 6/1225 (2013.01) [G02B 6/12019 (2013.01); G02B 2006/1213 (2013.01); G02B 2006/12173 (2013.01); G02B 2006/12176 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first oxide substrate structure adjacent a semiconductor substrate along a first direction, a first surface of the first oxide substrate structure facing a second direction different than the first direction, a first surface of the semiconductor substrate facing the second direction;
an oxide layer over the first surface of the semiconductor substrate along the second direction and the first surface of the first oxide substrate structure along the second direction;
a first waveguide over the oxide layer;
a photonic die over the oxide layer and optically coupled to the first waveguide; and
an electronic die electrically coupled to the photonic die.