US 12,392,819 B2
Semiconductor device
Kazuki Shimada, Tokyo (JP)
Assigned to RENESAS ELECTRONICS CORPORATION, Tokyo (JP)
Filed by RENESAS ELECTRONICS CORPORATION, Tokyo (JP)
Filed on Dec. 6, 2022, as Appl. No. 18/062,257.
Claims priority of application No. 2021-214600 (JP), filed on Dec. 28, 2021.
Prior Publication US 2023/0204657 A1, Jun. 29, 2023
Int. Cl. G01R 31/28 (2006.01); G01R 31/00 (2006.01); H02H 1/00 (2006.01); H02H 9/04 (2006.01); H10D 89/60 (2025.01)
CPC G01R 31/2879 (2013.01) [H02H 1/0007 (2013.01); H02H 9/046 (2013.01); H10D 89/601 (2025.01); G01R 31/002 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a potential supply terminal to which a potential is supplied;
an I/O terminal for exchanging a signal with an external device;
an I/O current detection load circuit electrically connected to the potential supply terminal and the I/O terminal; and
a current sensor circuit detecting an I/O current flowing through the I/O current detection load circuit,
wherein the current sensor circuit generates a sensor current proportional to the I/O current, and outputs the sensor current as output information, and
wherein the I/O current is an abnormal current flowing through the I/O terminal due to at least one of electrostatic discharge and electromagnetic susceptibility, and is a current greater than such a predetermined current as to become an abnormal state wherein when the I/O current flows through the I/O current detection load circuit, the I/O current detection load circuit generates an input voltage between a terminal into which the I/O current of the I/O current detection load circuit flows and a terminal from which the I/O current of the I/O current detection load circuit flows, and
wherein the I/O current detection load circuit has a first coefficient that is a ratio of the I/O current to the input voltage, the first coefficient being not constant with respect to the I/O current, and the I/O current and the input voltage being not proportional.