US 12,392,661 B2
Production method for Fabry-Perot interference filter
Takashi Kasahara, Hamamatsu (JP); Katsumi Shibayama, Hamamatsu (JP); Masaki Hirose, Hamamatsu (JP); Toshimitsu Kawai, Hamamatsu (JP); Hiroki Oyama, Hamamatsu (JP); and Yumi Kuramoto, Hamamatsu (JP)
Assigned to HAMAMATSU PHOTONICS K. K., Hamamatsu (JP)
Filed by HAMAMATSU PHOTONICS K.K., Hamamatsu (JP)
Filed on Dec. 18, 2020, as Appl. No. 17/126,297.
Application 17/126,297 is a continuation of application No. 16/065,856, granted, now 10,908,022, previously published as PCT/JP2017/017167, filed on May 1, 2017.
Claims priority of application No. 2016-106269 (JP), filed on May 27, 2016; and application No. 2016-163928 (JP), filed on Aug. 24, 2016.
Prior Publication US 2021/0131870 A1, May 6, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G01J 3/26 (2006.01); B23K 26/00 (2014.01); B23K 26/06 (2014.01); B23K 26/064 (2014.01); B23K 26/53 (2014.01); B23K 101/40 (2006.01); B23K 103/00 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01); G01J 3/02 (2006.01); G02B 5/28 (2006.01); G02B 26/00 (2006.01)
CPC G01J 3/26 (2013.01) [B23K 26/0006 (2013.01); B23K 26/064 (2015.10); B23K 26/0643 (2013.01); B23K 26/53 (2015.10); B81B 3/0072 (2013.01); B81C 1/00539 (2013.01); B81C 1/00634 (2013.01); G01J 3/0243 (2013.01); G02B 5/284 (2013.01); G02B 26/001 (2013.01); B23K 2101/40 (2018.08); B23K 2103/56 (2018.08)] 2 Claims
OG exemplary drawing
 
1. A method of manufacturing a Fabry-Perot interference filter comprising:
a forming step of forming a first thinned region, in the forming step, a first mirror layer having a plurality of first mirror portions each of which is expected to function as a fixed mirror, a sacrificial layer having a plurality of portions expected to be removed, and a second mirror layer having a plurality of second mirror portions each of which is expected to function as a movable mirror are formed on a first main surface of a wafer expected to be cut into a plurality of substrates along each of a plurality of lines such that one first mirror portion, one portion expected to be removed, and one second mirror portion are disposed in this order from one substrate side, and the first thinned region in which at least one of the first mirror layer, the sacrificial layer, and the second mirror layer is partially thinned along each of the plurality of lines is formed;
a cutting step of cutting the wafer into the plurality of substrates along each of the plurality of lines by forming a modified region within the wafer along each of the plurality of lines through irradiation of a laser light and extending a crack in a thickness direction of the wafer from the modified region, after the forming step; and
a removing step of removing the portion expected to be removed from the sacrificial layer through etching, between the forming step and the cutting step.