US 12,392,656 B2
Multilayer reflective stack for reducing crosstalk in split pixel image sensors
Heesoo Kang, Cupertino, CA (US); Cynthia Sun Yee Lee, Santa Clara, CA (US); and Bill Phan, Sunnyvale, CA (US)
Assigned to OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US)
Filed by OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US)
Filed on Dec. 6, 2022, as Appl. No. 18/076,084.
Prior Publication US 2024/0186353 A1, Jun. 6, 2024
Int. Cl. H01L 21/00 (2006.01); G01J 1/04 (2006.01); H01L 23/00 (2006.01); H10F 39/00 (2025.01)
CPC G01J 1/0422 (2013.01) [H10F 39/8053 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a semiconductor substrate;
a plurality of photodiodes disposed within the semiconductor substrate, wherein the plurality of photodiodes includes a first photodiode and a second photodiode adjacent to the first photodiode;
a multilayer reflective stack comprising a first material having a first refractive index and a second material having a second refractive index; and
a dielectric layer having a third refractive index, the dielectric layer disposed between the first photodiode and the multilayer reflective stack, wherein the first material is disposed between the second material and the dielectric layer, and wherein the first refractive index is greater than the second refractive index and the third refractive index.