US 12,392,054 B2
CZ crucible with a gap between an inner quartz crucible and an outer graphite crucible
Kazuki Tomokuni, Echizen (JP); and Yoshinori Ikeda, Echizen (JP)
Assigned to SHIN-ETSU QUARTZ PRODUCTS CO., LTD., Tokyo (JP)
Appl. No. 18/018,165
Filed by SHIN-ETSU QUARTZ PRODUCTS CO., LTD., Tokyo (JP)
PCT Filed Jul. 2, 2021, PCT No. PCT/JP2021/025117
§ 371(c)(1), (2) Date Jan. 26, 2023,
PCT Pub. No. WO2022/024667, PCT Pub. Date Feb. 3, 2022.
Claims priority of application No. 2020-129012 (JP), filed on Jul. 30, 2020.
Prior Publication US 2023/0265583 A1, Aug. 24, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C30B 35/00 (2006.01); C30B 15/12 (2006.01); C30B 29/06 (2006.01)
CPC C30B 35/002 (2013.01) [C30B 15/12 (2013.01); C30B 29/06 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A CZ crucible for growing a single crystal silicon ingot by a CZ method, wherein
the CZ crucible comprises a closed-end cylindrical graphite crucible and a closed-end cylindrical quartz glass crucible disposed inside the graphite crucible,
the CZ crucible includes a gap between an inner surface of a bottom portion of the graphite crucible and an outer surface of a bottom portion of the quartz glass crucible on a central axis of the CZ crucible, the gap keeping the inner surface of the bottom portion of the graphite crucible and the outer surface of the bottom portion of the quartz glass crucible contactless with each other,
the outer surface of the bottom portion of the quartz glass crucible has a concave surface shape, and
an inner surface of the bottom portion of the quartz glass crucible at a central axis of the quartz glass crucible has a curved concave surface shape.