US 12,392,052 B2
Film deposition method
Yoshikazu Moriyama, Shizuoka (JP); Yoshiaki Daigo, Tokyo (JP); Toru Watanabe, Kanagawa (JP); and Shigeaki Ishii, Kanagawa (JP)
Assigned to NuFlare Technology, Inc., Kanagawa (JP)
Filed by NuFlare Technology, Inc., Kanagawa (JP)
Filed on Mar. 22, 2023, as Appl. No. 18/124,685.
Claims priority of application No. 2022-049111 (JP), filed on Mar. 24, 2022.
Prior Publication US 2023/0304187 A1, Sep. 28, 2023
Int. Cl. C30B 25/16 (2006.01); C23C 16/32 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); C30B 25/12 (2006.01); C30B 29/36 (2006.01)
CPC C30B 25/16 (2013.01) [C23C 16/325 (2013.01); C23C 16/4584 (2013.01); C23C 16/46 (2013.01); C30B 25/12 (2013.01); C30B 29/36 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A film deposition method, comprising:
rotating a wafer mounted on a susceptor in a reaction chamber; and
controlling a temperature of the wafer such that, when changing a rotational speed of the wafer before and after a film deposition step of introducing a process gas into the reaction chamber and epitaxially growing a SiC film on the wafer, a force of friction generated on a contact surface between the wafer and the susceptor becomes larger than a force of inertia generated in a direction of rotation of the wafer,
wherein the temperature of the wafer at a starting point of a rotational speed acceleration is a threshold temperature,
during a rotational speed deceleration period after stopping the epitaxial growth, the temperature and the rotational speed of the wafer decrease, and when the rotational speed reaches a threshold rotational speed, the rotational speed is maintained at the threshold rotational speed until the temperature of the wafer reaches a first temperature, wherein the point in time when the temperature of the wafer reaches the threshold temperature during the temperature decrease falls within the period when the rotational speed is maintained at the threshold rotational speed,
the threshold rotational speed falls between a first rotational speed in a state before and after depositing the SiC film on the wafer and a second rotational speed during epitaxial growth of the SiC film and which is higher than the first rotational speed,
wherein the first temperature is a temperature when the wafer is carried in/out to/from the reaction chamber.