| CPC C23C 16/505 (2013.01) [C23C 16/345 (2013.01); C23C 16/45536 (2013.01); C23C 16/4554 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01J 37/32449 (2013.01); H01J 37/32743 (2013.01); H01J 2237/3321 (2013.01)] | 21 Claims |
|
1. A method of conformally forming a film on a substrate, the method comprising:
loading a substrate within a reaction chamber of a reactor;
providing a first gas comprising a carrier gas within the reaction chamber for a first gas pulse period;
providing a second gas consisting of the carrier gas and a nitrogen-containing reactant within the reaction chamber;
using a first plasma condition, forming first activated species using the second gas to thereby form a layer of deposited material;
forming a treated layer using a second plasma condition to form second activated species using the second gas to treat the deposited material; and
using a third plasma condition, forming activated species using a third gas to thereby form a surface-modified layer,
wherein forming the treated layer consists essentially of forming the second activated species using the second gas,
wherein the first plasma condition and the second plasma condition differ,
wherein the third gas consists of the carrier gas and the nitrogen-containing reactant and a hydrogen-containing reactant,
wherein the first plasma condition is carried out at a first plasma power, wherein the second plasma condition is carried out at a second plasma power, wherein the third plasma condition is carried out at a third plasma power, wherein the second plasma power is greater than the first plasma power, and wherein the third plasma power is greater than the first plasma power and less than the second plasma power.
|