| CPC C23C 16/45544 (2013.01) [C23C 16/45561 (2013.01); C23C 16/45574 (2013.01); C23C 16/52 (2013.01)] | 17 Claims |

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1. Powder atomic layer deposition (ALD) equipment comprising:
a process chamber having an accommodation space therein to accommodate powder;
a gas supplier mounted under the process chamber to sequentially supply a plurality of gases to the powder; and
a gas exhauster mounted on the process chamber to exhaust, to an outside, the plurality of gases discharged from the process chamber,
wherein the gas supplier comprises:
a gas supply plate comprising a first gas hole provided in a center and a plurality of edge gas holes, wherein the plurality of edge gas holes are comprised of at least one edge hole group, each of the at least one edge hole group has an equidistance from the first gas hole, and adjacent edge gas holes of the at least one edge hole group are provided in an edge at equal angles radially from the first gas hole;
a first gas supply line connected to the first gas hole;
edge gas supply lines connected to the plurality of edge gas holes;
a first valve for opening or closing the first gas supply line;
edge valves for opening or closing the edge gas supply lines;
a gas supply sequence controller for alternately applying control signals to the first valve and at least one valve of the edge valves, which are connected to a part of the plurality of edge gas holes, to inject at least one of a source gas, a purge gas, and a reaction gas; and
a buffer tank connected to the first gas supply line and the edge gas supply lines to generate a gas supply pressure,
wherein the buffer tank is configured to be connected to at least one of a source gas source, a purge gas source, and a reaction gas source by using a gas selection valve, and
wherein the buffer tank is configured to inject the plurality of gases supplied from the at least one of the source gas source, the purge gas source and the reaction gas source at high pressure.
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