US 12,392,034 B2
Method for producing organic-inorganic hybrid materials
Itxasne Azpitarte, Guipuzcoa (ES); and Mato Knez, Guipuzcoa (ES)
Assigned to CIC nanoGUNE—Asociación Centro de Investigación Cooperativa en Nanociencias, Guipuzcoa (ES)
Appl. No. 17/262,329
Filed by CIC NANOGUNE—ASOCIACIÓN CENTRO DE INVESTIGACIÓN COOPERATIVA EN NANOCIENCIAS, Guipuzcoa (ES)
PCT Filed Jul. 24, 2019, PCT No. PCT/EP2019/069970
§ 371(c)(1), (2) Date Jan. 22, 2021,
PCT Pub. No. WO2020/020972, PCT Pub. Date Jan. 30, 2020.
Claims priority of application No. 18382552 (EP), filed on Jul. 24, 2018.
Prior Publication US 2021/0292899 A1, Sep. 23, 2021
Int. Cl. C23C 16/455 (2006.01); C23C 16/52 (2006.01); D06M 11/45 (2006.01); D06M 101/36 (2006.01)
CPC C23C 16/45529 (2013.01) [C23C 16/45534 (2013.01); C23C 16/45553 (2013.01); C23C 16/45555 (2013.01); C23C 16/45559 (2013.01); C23C 16/52 (2013.01); D06M 11/45 (2013.01); D06M 2101/36 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A process for the preparation of organic-inorganic hybrid materials comprising the steps of:
i) providing a polymeric substrate in a reaction chamber;
ii) pulsing a first metal, semimetal or semiconductor precursor or monofunctional or oligofunctional organic molecule into the reaction chamber directly on a surface of the polymeric substrate and then purging the reaction chamber, wherein there is no exposure time between the pulsing and the purging;
iii) pulsing a second metal, semimetal or semiconductor precursor into the reaction chamber, followed by an exposure time and then purging of the reaction chamber, wherein the exposure time between the pulsing and the purging is at least 5 seconds; and
iv) pulsing a co-reactant into the reaction chamber optionally followed by an exposure time and then purging of the reaction chamber, wherein the co-reactant reacts with the first metal, semimetal or semiconductor precursor when no monofunctional or oligofunctional organic molecule is pulsed in step (ii) and/or with the second metal, semimetal or semiconductor precursor;
v) if necessary, pulsing a co-reactant into the reaction chamber, optionally followed by an exposure time, and then purging of the reaction chamber, wherein the co-reactant reacts with the unreacted first or second metal, semimetal or semiconductor precursor;
wherein the co-reactant of step (iv) is different from the co-reactant of step (v) and wherein the first metal, semimetal or semiconductor precursor is different from the second metal, semimetal or semiconductor precursor.