US 12,392,033 B2
Substrate processing apparatus and substrate processing method
Yuichi Furuya, Yamanashi (JP); and Masamichi Hara, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Appl. No. 18/255,407
Filed by Tokyo Electron Limited, Tokyo (JP)
PCT Filed Dec. 1, 2021, PCT No. PCT/JP2021/044135
§ 371(c)(1), (2) Date Jun. 1, 2023,
PCT Pub. No. WO2022/130985, PCT Pub. Date Jun. 23, 2022.
Claims priority of application No. 2020-207526 (JP), filed on Dec. 15, 2020.
Prior Publication US 2024/0093362 A1, Mar. 21, 2024
Int. Cl. C23C 16/44 (2006.01); C23C 16/16 (2006.01); C23C 16/52 (2006.01)
CPC C23C 16/4412 (2013.01) [C23C 16/16 (2013.01); C23C 16/52 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A substrate processing apparatus that deposits a film on a substrate disposed in a processing chamber, the substrate processing apparatus comprising:
a process gas supply configured to supply a process gas into the processing chamber, the process gas including a source gas and a carrier gas that carries the source gas;
a vacuum pump configured to exhaust an interior of the processing chamber; and
a purge gas supply configured to supply a purge gas into the vacuum pump,
wherein the purge gas includes a first gas that is identical to the carrier gas,
wherein the purge gas includes a second gas that is different from the first gas, and
wherein the purge gas supply includes a gas switcher configured to switch between a state of supplying the first gas into the vacuum pump and a state of supplying the second gas into the vacuum pump.