US 12,392,031 B2
Method of processing substrate, substrate processing apparatus, recording medium, and method of manufacturing semiconductor device
Yoshitomo Hashimoto, Toyama (JP); Yoshiro Hirose, Toyama (JP); and Kimihiko Nakatani, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Mar. 11, 2021, as Appl. No. 17/198,604.
Claims priority of application No. 2020-052020 (JP), filed on Mar. 24, 2020.
Prior Publication US 2021/0301396 A1, Sep. 30, 2021
Int. Cl. C23C 16/44 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/4404 (2013.01) [H01L 21/0217 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
(a) supplying a fluorine-containing gas to an interior of a process vessel such that fluorine is adhered to the interior of the process vessel;
(b) after (a), exhausting the fluorine-containing gas from the interior of the process vessel while maintaining a state in which the fluorine is adhered to the interior of the process vessel by supplying a purge gas to the interior of the process vessel under a purge condition; and
(c) after (b) forming a film on the substrate by supplying a film-forming gas to the substrate accommodated in the interior of the process vessel to which the fluorine is adhered, such that the fluorine adhered to the process vessel is introduced into the film,
wherein (b) includes adjusting the purge condition to adjust an amount of the fluorine adhered to the interior of the process vessel such that a concentration of the fluorine in the film formed in (c) is controlled to a predetermined concentration.