US 12,392,029 B2
Titanium nitride film forming method and titanium nitride film forming apparatus
Tsuyoshi Takahashi, Nirasaki (JP); Seokhyoung Hong, Hwaseong-si (KR); and Kensuke Higuchi, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on May 2, 2022, as Appl. No. 17/661,577.
Claims priority of application No. 2021-079724 (JP), filed on May 10, 2021; and application No. 2022-024043 (JP), filed on Feb. 18, 2022.
Prior Publication US 2022/0356565 A1, Nov. 10, 2022
Int. Cl. C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01)
CPC C23C 16/34 (2013.01) [C23C 16/45553 (2013.01); C23C 16/52 (2013.01); H01L 21/28568 (2013.01); H01L 21/76883 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of forming a titanium nitride film, comprising:
adjusting an open degree of an APC (auto pressure controller) valve; and
forming the titanium nitride film by alternately repeating supplying a raw material gas, which contains a titanium compound including chlorine and titanium, to a substrate accommodated in a processing container, and supplying a reaction gas, which contains a nitrogen compound including nitrogen and reacts with the titanium compound to form titanium nitride, to the substrate,
wherein the forming the titanium nitride film is executed under a condition in which a pressure in the processing container is set within a range of 2.7 kPa to 12.6 kPa so that a specific resistance of the titanium nitride film becomes 57 micro-ohm-cm or less, and
wherein the pressure in the processing container during the forming the titanium nitride film is about twice a pressure in the processing container during the adjusting the open degree of the APC valve.