| CPC C23C 16/278 (2013.01) [C01B 32/28 (2017.08); C23C 16/04 (2013.01); C23C 16/274 (2013.01); C23C 16/511 (2013.01); C23C 16/56 (2013.01); C30B 25/02 (2013.01); C30B 25/04 (2013.01); C30B 25/105 (2013.01); C30B 25/186 (2013.01); C30B 29/04 (2013.01); C30B 31/06 (2013.01); C30B 33/02 (2013.01); C30B 33/04 (2013.01); C30B 33/12 (2013.01); B82Y 20/00 (2013.01); C01P 2002/52 (2013.01)] | 25 Claims |

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1. A method of manufacturing a diamond, the method comprising:
(a) epitaxially growing the diamond within a plasma assisted chemical vapor deposition reactor;
(b) etching the diamond to create a surface discontinuity located inwardly from a periphery of the diamond;
(c) forming color centers in the diamond in predetermined three-dimensional locations;
(d) emitting multiple ionization laser pulses, of different characteristics, to ionize the diamond;
(e) emitting at least one annealing laser pulse to anneal the diamond; and
(f) the locations of the color centers allowing communication between more than two of the color centers.
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