US 12,392,023 B1
Methods and apparatus for depositing amorphous indium tin oxide film
Yaoying Zhong, Singapore (SG); Siew Kit Hoi, Singapore (SG); Palaniappan Chidambaram, Singapore (SG); Jaysen Chiam, Singapore (SG); Li Ying Choo, Singapore (SG); Jay Min Soh, Singapore (SG); Xiao Tan, Singapore (SG); and Haomin Xu, Singapore (SG)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on May 3, 2024, as Appl. No. 18/654,389.
Int. Cl. C23C 14/50 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); C23C 14/54 (2006.01); H01J 37/34 (2006.01)
CPC C23C 14/086 (2013.01) [C23C 14/3414 (2013.01); C23C 14/345 (2013.01); C23C 14/50 (2013.01); C23C 14/54 (2013.01); H01J 37/3441 (2013.01); H01J 37/3447 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of processing a substrate in a process chamber, the method comprising:
positioning a substrate on a substrate support in a process volume so that the substrate is opposite a sputter target comprising indium tin oxide;
flowing a plasma-forming gas into the process volume; and
sputtering the indium tin oxide onto the substrate while applying AC bias to the substrate, wherein flowing the plasma-forming gas includes introducing the plasma-forming gas through a plurality of holes in process kit shields comprising:
a lower shield having a first annular body, a first upper flange at a top of the first annular body, and a channel at a bottom of the first annular body, the first annular body having a plurality of first holes surrounding an opening configured to surround a substrate during substrate processing; and
an upper shield having a second annular body and a second upper flange configured to seat on the first upper flange, the second annular body having an end extending into the channel, the end spaced from the first annular body, the second annular body having a plurality of second holes, the second holes being spaced radially inward and below the first holes,
wherein the first holes and the second holes are configured to define a flow path for the plasma-forming gas from a location below the substrate support through the first holes and the second holes to a location above the substrate.