US 12,391,848 B2
Polishing composition, method for producing polishing composition, polishing method, and method for producing semiconductor substrate
Sonosuke Ishiguro, Kiyosu (JP); and Shogo Onishi, Kiyosu (JP)
Assigned to FUJIMI INCORPORATED, Kiyosu (JP)
Filed by FUJIMI INCORPORATED, Kiyosu (JP)
Filed on Mar. 9, 2021, as Appl. No. 17/196,487.
Claims priority of application No. 2020-044292 (JP), filed on Mar. 13, 2020.
Prior Publication US 2021/0292600 A1, Sep. 23, 2021
Int. Cl. C09G 1/02 (2006.01)
CPC C09G 1/02 (2013.01) 8 Claims
 
1. A polishing method comprising polishing an object to be polished using a polishing composition comprising abrasive grains, an additive, a pH adjusting agent, and a dispersing medium, wherein:
a zeta potential of the abrasive grains is negative,
the additive is a crosslinked bicyclic compound having a tertiary nitrogen atom,
a content of the additive is 0.03% by mass or more and less than 0.5% by mass with respect to an entire polishing composition mass,
a content of the abrasive grains is 1.5% by mass or more and 20% by mass or less with respect to an entire polishing composition mass,
a pH of the polishing composition is less than 5,
the polishing composition does not comprise an oxidizing agent, and
the object to be polished comprises polycrystalline silicon doped with a p-type impurity.