US 12,391,553 B2
Synthetic engineered diamond materials with spin impurities and methods of making the same
Nathalie de Leon, Princeton, NJ (US); Brendon C. Rose, Princeton, NJ (US); Ding Huang, Jersey City, NJ (US); Zi-Huai Zhang, Princeton, NJ (US); Alexei M. Tyryshkin, Yardley, PA (US); Sorawis Sangtawesin, Bangkok (TH); Srikanth Srinivasan, Princeton, NJ (US); Matthew Lee Markham, Cholsey (GB); Andrew Mark Edmonds, Didcot (GB); Daniel J. Twitchen, Bucks (GB); and Stephen A. Lyon, Princeton, NJ (US)
Assigned to The Trustees of Princeton University, Princeton, NJ (US); and Element Six Technologies Limited, Oxfordshire (GB)
Appl. No. 16/648,076
Filed by The Trustees of Princeton University, Princeton, NJ (US); and Element Six Technologies Limited, Oxfordshire (GB)
PCT Filed Sep. 18, 2018, PCT No. PCT/US2018/051482
§ 371(c)(1), (2) Date Mar. 17, 2020,
PCT Pub. No. WO2019/055975, PCT Pub. Date Mar. 21, 2019.
Claims priority of provisional application 62/559,918, filed on Sep. 18, 2017.
Prior Publication US 2020/0277196 A1, Sep. 3, 2020
Int. Cl. C01B 32/28 (2017.01); C09K 11/59 (2006.01); B82Y 20/00 (2011.01)
CPC C01B 32/28 (2017.08) [C09K 11/59 (2013.01); B82Y 20/00 (2013.01); C01P 2006/60 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A composition of matter, comprising:
carbon in a diamond lattice;
a neutral silicon vacancy center (SiV0) in the diamond lattice;
wherein the composition of matter displays a photoluminescence emission peak arising from the neutral silicon vacancy centers around 946 nm; and
wherein a zero phonon line for the neutral silicon vacancy center has a full width half maximum intrinsic inhomogeneous zero phonon line width of no more than 500 MHz over a time scale of at least 1 ms at temperatures below 40 K.