US 12,391,033 B2
Lamination process, and manufacturing method of semiconductor package using a chuck
Wei-Jie Huang, Hsinchu (TW); Yu-Ching Lo, Hsinchu (TW); Ching-Pin Yuan, Hsinchu (TW); Wen-Chih Lin, Hsinchu (TW); Cheng-Yu Kuo, Kaohsiung (TW); Yi-Yang Lei, Taichung (TW); and Ching-Hua Hsieh, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 2, 2023, as Appl. No. 18/363,750.
Application 18/363,750 is a division of application No. 17/395,440, filed on Aug. 5, 2021, granted, now 11,993,066.
Claims priority of provisional application 63/168,274, filed on Mar. 31, 2021.
Prior Publication US 2024/0017538 A1, Jan. 18, 2024
Int. Cl. H01L 21/48 (2006.01); B32B 38/18 (2006.01); H01L 23/00 (2006.01)
CPC B32B 38/1858 (2013.01) [H01L 21/4857 (2013.01); H01L 24/96 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A lamination method of a film material on a substrate, comprising:
providing a chuck comprising a top layer with a polymetric material and a support layer supporting the top layer, wherein the chuck has vacuum channels arranged along an arc path concentric to a circumference of the top layer, each of the vacuum channels extends through the top layer and the support layer, and wherein the support layer comprises a through hole between the vacuum channels and an outer side edge of the support layer, the top layer comprises a hemicylindrical concavity located at an outer side edge of the top layer, the hemicylindrical concavity extends from a top surface of the top layer to a bottom surface of the top layer, and the hemicylindrical concavity aligns with the through hole of the support layer;
disposing the film material on the top layer of the chuck to cover one end of the each of the vacuum channels;
applying suction at an opposite end of the each of the vacuum channels, whereby the film material is tensed on a front surface of the chuck;
contacting the film material tensed on the chuck with the substrate; and
separating the chuck from the substrate, wherein the film material remains on the substrate after the chuck is separated from the substrate.