US 12,390,883 B2
Etching of coated substrate
Jean-Baptiste Laudereau, Paris (FR); and Daniele Costantini, Paris (FR)
Assigned to SAINT-GOBAIN GLASS FRANCE, Courbevoie (FR)
Appl. No. 17/787,081
Filed by SAINT-GOBAIN GLASS FRANCE, Courbevoie (FR)
PCT Filed Dec. 18, 2020, PCT No. PCT/FR2020/052569
§ 371(c)(1), (2) Date Jun. 17, 2022,
PCT Pub. No. WO2021/123690, PCT Pub. Date Jun. 24, 2021.
Claims priority of application No. 1915197 (FR), filed on Dec. 20, 2019.
Prior Publication US 2023/0045271 A1, Feb. 9, 2023
Int. Cl. B23K 26/352 (2014.01); B23K 26/08 (2014.01); B23K 26/362 (2014.01); B23K 101/34 (2006.01)
CPC B23K 26/355 (2018.08) [B23K 26/0846 (2013.01); B23K 26/362 (2013.01); B23K 2101/34 (2018.08)] 15 Claims
OG exemplary drawing
 
1. A method for etching a pattern on a coating deposited on a substrate, said substrate scrolling at a scrolling velocity, said pattern being produced by a treatment unit generating a laser beam in the form of an etching point capable of being moved in a scrolling direction with a first amplitude at a first velocity greater than the scrolling velocity over at least one line portion and in a direction orthogonal to the scrolling direction with a second amplitude at a second velocity over at least one line portion, said method comprising, during the scrolling of the substrate: etching a first line of a length between and a first etching start point (PD1) and a first etching end point (PA1);performing at least one etching of another line (ni+1), said at least one etching consisting in: moving the laser beam from an etching end point (PAi) of a previously etched line (ni) that extends along the scrolling direction to an etching start point (PDi+1), said etching start point (PDi+1) of said other line (ni+1) being offset from the etching end point (PAi) of said previously etched line (ni) by a distance (dx) in the scrolling direction and by a distance (dy) in the direction orthogonal to the scrolling direction, etching said other line (ni+1) of a length between said etching start point (PDi+1) and an etching end point (PAi+1); moving the beam from the etching end point (PAi+1) to the first etching end point (PA1) before a length of the other line (ni+1) exceeds the first or second amplitude of the laser beam.