US 12,062,537 B2
High etch selectivity, low stress ashable carbon hard mask
Jun Xue, Fremont, CA (US); Mary Anne Manumpil, Northridge, CA (US); Shih-Ked Lee, Fremont, CA (US); and Samantha SiamHwa Tan, Fremont, CA (US)
Assigned to LAM RESEARCH CORPORATION, Fremont, CA (US)
Appl. No. 17/439,948
Filed by LAM RESEARCH CORPORATION, Fremont, CA (US)
PCT Filed Mar. 18, 2020, PCT No. PCT/US2020/023239
§ 371(c)(1), (2) Date Sep. 16, 2021,
PCT Pub. No. WO2020/197866, PCT Pub. Date Oct. 1, 2020.
Claims priority of provisional application 62/823,211, filed on Mar. 25, 2019.
Prior Publication US 2022/0181147 A1, Jun. 9, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/26 (2006.01); C23C 16/455 (2006.01); C23C 16/505 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/02274 (2013.01) [C23C 16/26 (2013.01); C23C 16/45536 (2013.01); C23C 16/505 (2013.01); H01L 21/02115 (2013.01); H01L 21/0228 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01)] 34 Claims
OG exemplary drawing
 
1. A method for depositing a carbon ashable hard mask layer on a substrate, comprising:
a) arranging the substrate on a substrate support in a processing chamber;
b) setting chamber pressure in a predetermined pressure range;
c) setting a substrate temperature in a predetermined temperature range from −20° C. to 200° C.;
d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; and
e) striking plasma by supplying RF plasma power to a coil arranged on a dielectric window above the substrate support for a first predetermined period to deposit a carbon ashable hard mask on the substrate, and further comprising supplying RF bias power to the substrate support during the first predetermined period.