| CPC H10K 50/11 (2023.02) [H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/171 (2023.02); H10K 50/18 (2023.02); H10K 50/181 (2023.02); H10K 71/00 (2023.02); H10K 59/12 (2023.02); H10K 2101/40 (2023.02)] | 20 Claims | 

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               1. An organic light-emitting diode (OLED) device, comprising: 
            a first electrode; 
                a light-emitting layer, a material of the light-emitting layer including a host material and a trap material, a lowest unoccupied molecular orbital energy level of the trap material being lower than a lowest unoccupied molecular orbital energy level of the host material, and a highest occupied molecular orbital energy level of the trap material being not higher than a highest occupied molecular orbital energy level of the host material; 
                an electron blocking layer, the lowest unoccupied molecular orbital energy level of the trap material being lower than a lowest unoccupied molecular orbital energy level of a material of the electron blocking layer; and 
                a second electrode; wherein 
                the first electrode, the light-emitting layer, the electron blocking layer and the second electrode are stacked in sequence. 
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               15. A manufacturing method for an organic light-emitting diode (OLED) device, comprising: 
            forming a first electrode, a light-emitting layer, an electron blocking layer and a second electrode; wherein 
                the first electrode, the light-emitting layer, the electron blocking layer and the second electrode are stacked in sequence, and a material of the light-emitting layer includes a host material and a trap material; 
                a lowest unoccupied molecular orbital energy level of the trap material is lower than a lowest unoccupied molecular orbital energy level of the host material, a highest occupied molecular orbital energy level of the trap material is not higher than a highest occupied molecular orbital energy level of the host material, and the lowest unoccupied molecular orbital energy level of the trap material is lower than a lowest unoccupied molecular orbital energy level of a material of the electron blocking layer. 
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