| CPC H10H 20/8512 (2025.01) [B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); H10H 20/0361 (2025.01)] | 6 Claims |

|
1. A method for producing semiconductor nanoparticles, comprising:
providing first semiconductor nanoparticles containing a semiconductor containing an element M1 being at least one element selected from the group consisting of Ag, Cu, Au and an alkali metal, and containing at least Ag, an element M2 being at least one element selected from the group consisting of Al, Ga, In and Tl, and containing at least one of In or Ga, and an element Z containing at least one element selected from the group consisting of S, Se and Te;
and
heat-treating a mixture containing the first semiconductor nanoparticles, a first compound having a Ga—S bond and being a Ga salt of a sulfur-containing compound selected from the group consisting of thiocarbamic acid, dithiocarbamic acid, thiocarbonate, dithiocarbonate (xanthogenic acid), trithiocarbonate, thiocarboxylic acid, dithiocarboxylic acid and derivatives thereof, a second compound containing Ga and not containing S, and an organic solvent to obtain second semiconductor nanoparticles.
|