US 12,389,723 B2
Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods
Martin F. Schubert, Mountain View, CA (US); and Vladimir Odnoblyudov, Eagle, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jan. 20, 2022, as Appl. No. 17/580,491.
Application 17/580,491 is a continuation of application No. 16/664,770, filed on Oct. 25, 2019, granted, now 11,233,179.
Application 16/664,770 is a continuation of application No. 16/134,813, filed on Sep. 18, 2018, granted, now 10,468,562, issued on Nov. 5, 2019.
Application 16/134,813 is a continuation of application No. 15/083,063, filed on Mar. 28, 2016, granted, now 10,096,748, issued on Oct. 9, 2018.
Application 15/083,063 is a continuation of application No. 13/216,062, filed on Aug. 23, 2011, granted, now 9,331,252, issued on May 3, 2016.
Prior Publication US 2022/0149248 A1, May 12, 2022
Int. Cl. H01L 33/00 (2010.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/816 (2025.01); H10H 20/818 (2025.01); H10H 20/825 (2025.01); H10H 20/851 (2025.01); H04B 10/50 (2013.01); H10H 20/813 (2025.01)
CPC H10H 20/8512 (2025.01) [H10H 20/01335 (2025.01); H10H 20/812 (2025.01); H10H 20/816 (2025.01); H10H 20/818 (2025.01); H10H 20/825 (2025.01); H04B 10/502 (2013.01); H10H 20/0361 (2025.01); H10H 20/813 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A solid-state radiation system, comprising:
a light emitting diode (LED) configured to emit first light having a first wavelength; and
a semiconductor wavelength converter coupled with the LED, the semiconductor wavelength converter including—
a first absorptive region connected to the LED, the first absorptive region having a first semiconductor material with a first material polarization and configured to generate, in response to receiving the first light, charge carriers,
a first emissive region adjacent to the first absorptive region, the first emissive region having a second semiconductor material with a second material polarization that forms, in combination with the first material polarization, a potential gradient selected to drive the charge carriers from the first absorptive region to the first emissive region, the first emissive region configured to emit, in response to receiving the charge carriers, a second light having a second wavelength different from the first wavelength, and
a second emissive region adjacent to the first absorptive region on a side of the first absorptive region opposite the first emissive region, and in contact with no barrier layer on a side of the second emissive region opposite the first absorptive region,
wherein a ratio of a first concentration of indium in the first semiconductor material to a second concentration of indium in the second semiconductor material being greater than 0.45 and less than or equal to 0.5.