US 12,389,719 B2
Light emitting diode device
Huining Wang, Xiamen (CN); Linhua Cao, Xiamen (CN); Hongwei Xia, Xiamen (CN); Chunlan He, Xiamen (CN); Lili Jiang, Xiamen (CN); Su-Hui Lin, Xiamen (CN); Renlong Yang, Xiamen (CN); and Chung-Ying Chang, Xiamen (CN)
Assigned to XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen (CN)
Filed by XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen (CN)
Filed on Oct. 24, 2022, as Appl. No. 18/049,017.
Claims priority of application No. 202111250377.9 (CN), filed on Oct. 26, 2021.
Prior Publication US 2023/0132270 A1, Apr. 27, 2023
Int. Cl. H10H 20/831 (2025.01); H10H 20/841 (2025.01)
CPC H10H 20/831 (2025.01) [H10H 20/841 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A light emitting diode (LED) device, comprising:
an epitaxial layered structure that includes a first semiconductor layer, a light emitting layer and a second semiconductor layer sequentially disposed in such an order along a first direction;
a first electrode that is disposed on said epitaxial layered structure and that is electrically connected to said first semiconductor layer, said first electrode including a first body portion and a first extending portion connected to said first body portion;
a second electrode that is disposed on said epitaxial layered structure and that is electrically connected to said second semiconductor layer, said second electrode including a second body portion and at least one second extending portion connected to said second body portion, said first extending portion extending from said first body portion toward said second body portion, and said second extending portion extending from said second body portion of said second electrode toward said first body portion; and
an insulating structure that is disposed between said first semiconductor layer and said first electrode, and between said second semiconductor layer and said second electrode, a portion of said insulating structure being disposed at a location corresponding to a region beneath where said second body portion and said second extending portion are connected,
wherein said first extending portion includes a first part and a plurality of second parts, a projection of said first part on said first semiconductor layer does not overlap a projection of said insulating structure on said first semiconductor layer, and a projection of each of said second parts entirely overlaps the projection of said insulating structure on said first semiconductor layer, said first part having a first sub-part that is located between said first body portion and one of said second parts closest to said first body portion, and a plurality of second sub-parts that are separated from one another by said second parts,
wherein a projection of said first sub-part on said first semiconductor layer has a first length measured in a second direction perpendicular to the first direction on said first semiconductor layer, and a projection of each of said second sub-parts on said first semiconductor layer independently has a second length measured in the second direction, and wherein the first length is greater than the second length, and
wherein a projection of each of said second parts on said first semiconductor layer independently has a third length measured in the second direction and a ratio of the second length to the third length ranges from 1:1.5 to 1:5.